Mobility exceeding 100 000 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msup><mml:mrow><mml:mi>cm</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msup><mml:mo>/</mml:mo><mml:mi mathvariant="normal">V</mml:mi></mml:math> s in modulation-doped shallow InAs quantum wells coupled to epitaxial aluminum

The two-dimensional electron gas residing in shallow InAs quantum wells coupled to epitaxial aluminum is a widely utilized platform for exploration of topological superconductivity. Strong spin-orbit coupling, large effective $g$ factor, and control over proximity-induced superconductivity are important attributes. Disorder semiconductor structures plays crucial role the stability putative phases hybrid structures. We report on transport properties 2DEGs 10 nm below surface which mobility may exceed 100 000 ${\mathrm{cm}}^{2}/\mathrm{V}$ s at 2DEG density ${n}_{2\mathrm{DEG}}\ensuremath{\le}1\ifmmode\times\else\texttimes\fi{}{10}^{12}\phantom{\rule{4pt}{0ex}}{\mathrm{cm}}^{\ensuremath{-}2}$ low temperature.